15% off
| Hersteller | |
| Hersteller-Teilenummer | STD30NF04LT-VB |
| EBEE-Teilenummer | E8558287 |
| Gehäuse | TO-252 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 40V 55A 3.75W 1.5V@250uA 1 N-channel TO-252-2 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.4387 | $ 0.4387 |
| 10+ | $0.3482 | $ 3.4820 |
| 30+ | $0.3104 | $ 9.3120 |
| 100+ | $0.2619 | $ 26.1900 |
| 500+ | $0.2133 | $ 106.6500 |
| 1000+ | $0.2011 | $ 201.1000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VBsemi Elec STD30NF04LT-VB | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 12mΩ@10V;14mΩ@4.5V | |
| Betriebstemperatur - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 570pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 100W | |
| Drain to Source Voltage | 40V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 55A | |
| Ciss-Input Capacitance | 1.801nF | |
| Output Capacitance(Coss) | 725pF | |
| Gate Charge(Qg) | 85nC@10V;[email protected] |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.4387 | $ 0.4387 |
| 10+ | $0.3482 | $ 3.4820 |
| 30+ | $0.3104 | $ 9.3120 |
| 100+ | $0.2619 | $ 26.1900 |
| 500+ | $0.2133 | $ 106.6500 |
| 1000+ | $0.2011 | $ 201.1000 |
