15% off
| Hersteller | |
| Hersteller-Teilenummer | STD25NF10T4-VB |
| EBEE-Teilenummer | E87429115 |
| Gehäuse | TO-252 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 100V 40A 3.75W 1V@250uA 1 N-channel TO-252 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.7166 | $ 0.7166 |
| 10+ | $0.5885 | $ 5.8850 |
| 30+ | $0.5237 | $ 15.7110 |
| 100+ | $0.4603 | $ 46.0300 |
| 500+ | $0.3846 | $ 192.3000 |
| 1000+ | $0.3644 | $ 364.4000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VBsemi Elec STD25NF10T4-VB | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 30mΩ@10V | |
| Betriebstemperatur - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 120pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 3.75W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Current - Continuous Drain(Id) | 40A | |
| Ciss-Input Capacitance | 2.6nF | |
| Output Capacitance(Coss) | 290pF | |
| Gate Charge(Qg) | 35nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.7166 | $ 0.7166 |
| 10+ | $0.5885 | $ 5.8850 |
| 30+ | $0.5237 | $ 15.7110 |
| 100+ | $0.4603 | $ 46.0300 |
| 500+ | $0.3846 | $ 192.3000 |
| 1000+ | $0.3644 | $ 364.4000 |
