| Hersteller | |
| Hersteller-Teilenummer | STD12L01A-VB |
| EBEE-Teilenummer | E829778709 |
| Gehäuse | TO-251 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 100V 15A 0.11Ω@10V,15A 61W 1V@250uA TO-251 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.4398 | $ 0.4398 |
| 10+ | $0.3462 | $ 3.4620 |
| 30+ | $0.3049 | $ 9.1470 |
| 80+ | $0.2557 | $ 20.4560 |
| 480+ | $0.2319 | $ 111.3120 |
| 960+ | $0.2192 | $ 210.4320 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VBsemi Elec STD12L01A-VB | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 115mΩ@6V | |
| Betriebstemperatur - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 70pF | |
| Pd - Power Dissipation | 61W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Current - Continuous Drain(Id) | 15A | |
| Ciss-Input Capacitance | 892pF | |
| Output Capacitance(Coss) | 110pF | |
| Gate Charge(Qg) | 25nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.4398 | $ 0.4398 |
| 10+ | $0.3462 | $ 3.4620 |
| 30+ | $0.3049 | $ 9.1470 |
| 80+ | $0.2557 | $ 20.4560 |
| 480+ | $0.2319 | $ 111.3120 |
| 960+ | $0.2192 | $ 210.4320 |
