| Hersteller | |
| Hersteller-Teilenummer | STB60NF06LT4-VB |
| EBEE-Teilenummer | E84355088 |
| Gehäuse | TO-263(D2PAK) |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 60V 75A 136W 11mΩ@10V,75A 3V@250uA 1 N-channel TO-263-2 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.0003 | $ 1.0003 |
| 10+ | $0.8193 | $ 8.1930 |
| 30+ | $0.7288 | $ 21.8640 |
| 100+ | $0.5700 | $ 57.0000 |
| 500+ | $0.5161 | $ 258.0500 |
| 800+ | $0.4891 | $ 391.2800 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VBsemi Elec STB60NF06LT4-VB | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 11mΩ@10V | |
| Betriebstemperatur - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 225pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 136W | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Current - Continuous Drain(Id) | 75A | |
| Ciss-Input Capacitance | 4.3nF | |
| Output Capacitance(Coss) | 475pF | |
| Gate Charge(Qg) | 47nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.0003 | $ 1.0003 |
| 10+ | $0.8193 | $ 8.1930 |
| 30+ | $0.7288 | $ 21.8640 |
| 100+ | $0.5700 | $ 57.0000 |
| 500+ | $0.5161 | $ 258.0500 |
| 800+ | $0.4891 | $ 391.2800 |
