15% off
| Hersteller | |
| Hersteller-Teilenummer | SDM9926-VB |
| EBEE-Teilenummer | E8725152 |
| Gehäuse | SO-8 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 20V 7.1A 1.3W 1.5V@250uA 2 N-Channel SO-8 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.3032 | $ 1.5160 |
| 50+ | $0.2427 | $ 12.1350 |
| 150+ | $0.2167 | $ 32.5050 |
| 500+ | $0.1844 | $ 92.2000 |
| 2500+ | $0.1699 | $ 424.7500 |
| 4000+ | $0.1612 | $ 644.8000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VBsemi Elec SDM9926-VB | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 19mΩ@4.5V;26mΩ@2.5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | - | |
| Number | 2 N-Channel | |
| Pd - Power Dissipation | 1.3W | |
| Drain to Source Voltage | 20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Current - Continuous Drain(Id) | 7.1A | |
| Ciss-Input Capacitance | - | |
| Gate Charge(Qg) | [email protected] |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.3032 | $ 1.5160 |
| 50+ | $0.2427 | $ 12.1350 |
| 150+ | $0.2167 | $ 32.5050 |
| 500+ | $0.1844 | $ 92.2000 |
| 2500+ | $0.1699 | $ 424.7500 |
| 4000+ | $0.1612 | $ 644.8000 |
