5% off
| Hersteller | |
| Hersteller-Teilenummer | SDM9433-VB |
| EBEE-Teilenummer | E8725150 |
| Gehäuse | SO-8 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 20V 13A 1.9W 500mV@250uA 1 Piece P-Channel SO-8 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.3398 | $ 1.6990 |
| 50+ | $0.2669 | $ 13.3450 |
| 150+ | $0.2356 | $ 35.3400 |
| 500+ | $0.1966 | $ 98.3000 |
| 2500+ | $0.1792 | $ 448.0000 |
| 4000+ | $0.1687 | $ 674.8000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VBsemi Elec SDM9433-VB | |
| RoHS | ||
| Typ | P-Channel | |
| RDS(on) | 15mΩ@4.5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | - | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 19W | |
| Drain to Source Voltage | 20V | |
| Gate Threshold Voltage (Vgs(th)) | 500mV | |
| Current - Continuous Drain(Id) | 13A | |
| Ciss-Input Capacitance | - | |
| Gate Charge(Qg) | 50nC@8V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.3398 | $ 1.6990 |
| 50+ | $0.2669 | $ 13.3450 |
| 150+ | $0.2356 | $ 35.3400 |
| 500+ | $0.1966 | $ 98.3000 |
| 2500+ | $0.1792 | $ 448.0000 |
| 4000+ | $0.1687 | $ 674.8000 |
