| Hersteller | |
| Hersteller-Teilenummer | PHP8N50E-VB |
| EBEE-Teilenummer | E829779172 |
| Gehäuse | TO-220AB |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 500V 8.1A 250W 0.66Ω@10V,8.4A 4V@250uA TO-220AB MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.9971 | $ 0.9971 |
| 10+ | $0.8018 | $ 8.0180 |
| 50+ | $0.7050 | $ 35.2500 |
| 100+ | $0.6097 | $ 60.9700 |
| 500+ | $0.5510 | $ 275.5000 |
| 1000+ | $0.5224 | $ 522.4000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VBsemi Elec PHP8N50E-VB | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 660mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 11pF | |
| Pd - Power Dissipation | 250W | |
| Drain to Source Voltage | 500V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 13A | |
| Ciss-Input Capacitance | 1.91nF | |
| Gate Charge(Qg) | 81nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.9971 | $ 0.9971 |
| 10+ | $0.8018 | $ 8.0180 |
| 50+ | $0.7050 | $ 35.2500 |
| 100+ | $0.6097 | $ 60.9700 |
| 500+ | $0.5510 | $ 275.5000 |
| 1000+ | $0.5224 | $ 522.4000 |
