| Hersteller | |
| Hersteller-Teilenummer | LR024N-VB |
| EBEE-Teilenummer | E8725106 |
| Gehäuse | TO-252 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 60V 18A 2.1W 3V@250uA 1 N-channel TO-252 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.3938 | $ 0.3938 |
| 10+ | $0.3154 | $ 3.1540 |
| 30+ | $0.2822 | $ 8.4660 |
| 100+ | $0.2399 | $ 23.9900 |
| 500+ | $0.1841 | $ 92.0500 |
| 1000+ | $0.1735 | $ 173.5000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VBsemi Elec LR024N-VB | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 73mΩ@10V;85mΩ@4.5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 40pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 41.7W | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Current - Continuous Drain(Id) | 18A | |
| Ciss-Input Capacitance | 660pF | |
| Output Capacitance(Coss) | 85pF | |
| Gate Charge(Qg) | 19.8nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.3938 | $ 0.3938 |
| 10+ | $0.3154 | $ 3.1540 |
| 30+ | $0.2822 | $ 8.4660 |
| 100+ | $0.2399 | $ 23.9900 |
| 500+ | $0.1841 | $ 92.0500 |
| 1000+ | $0.1735 | $ 173.5000 |
