| Hersteller | |
| Hersteller-Teilenummer | IRFBC20LPBF-VB |
| EBEE-Teilenummer | E829779466 |
| Gehäuse | TO-262 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 650V 4A 2.5Ω@10V,3.1A 60W 4V@250uA TO-262 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.5986 | $ 0.5986 |
| 10+ | $0.4827 | $ 4.8270 |
| 50+ | $0.4240 | $ 21.2000 |
| 100+ | $0.3668 | $ 36.6800 |
| 500+ | $0.3319 | $ 165.9500 |
| 1000+ | $0.3144 | $ 314.4000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VBsemi Elec IRFBC20LPBF-VB | |
| RoHS | ||
| Typ | N-Channel | |
| Konfiguration | - | |
| RDS(on) | 2.5Ω@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 7pF | |
| Number | - | |
| Pd - Power Dissipation | 60W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 4A | |
| Ciss-Input Capacitance | 800pF | |
| Output Capacitance(Coss) | 177pF | |
| Gate Charge(Qg) | 50nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.5986 | $ 0.5986 |
| 10+ | $0.4827 | $ 4.8270 |
| 50+ | $0.4240 | $ 21.2000 |
| 100+ | $0.3668 | $ 36.6800 |
| 500+ | $0.3319 | $ 165.9500 |
| 1000+ | $0.3144 | $ 314.4000 |
