15% off
| Hersteller | |
| Hersteller-Teilenummer | IRF644PBF-VB |
| EBEE-Teilenummer | E87569015 |
| Gehäuse | TO-220AB |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 250V 8.5A 125W 190mΩ@10V 2.1V 1 N-channel TO-220 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.8259 | $ 0.8259 |
| 10+ | $0.6707 | $ 6.7070 |
| 50+ | $0.5938 | $ 29.6900 |
| 100+ | $0.5169 | $ 51.6900 |
| 500+ | $0.4711 | $ 235.5500 |
| 1000+ | $0.4481 | $ 448.1000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VBsemi Elec IRF644PBF-VB | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 190mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 85pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 125W | |
| Drain to Source Voltage | 250V | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Current - Continuous Drain(Id) | 14A | |
| Ciss-Input Capacitance | 1.3nF | |
| Output Capacitance(Coss) | 330pF | |
| Gate Charge(Qg) | 68nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.8259 | $ 0.8259 |
| 10+ | $0.6707 | $ 6.7070 |
| 50+ | $0.5938 | $ 29.6900 |
| 100+ | $0.5169 | $ 51.6900 |
| 500+ | $0.4711 | $ 235.5500 |
| 1000+ | $0.4481 | $ 448.1000 |
