| Hersteller | |
| Hersteller-Teilenummer | IRF640FP-VB |
| EBEE-Teilenummer | E819711201 |
| Gehäuse | TO-220 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 200V 18A 1 N-channel TO-220 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.8320 | $ 0.8320 |
| 10+ | $0.6701 | $ 6.7010 |
| 50+ | $0.5891 | $ 29.4550 |
| 100+ | $0.5081 | $ 50.8100 |
| 500+ | $0.4605 | $ 230.2500 |
| 1000+ | $0.4351 | $ 435.1000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VBsemi Elec IRF640FP-VB | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 200mΩ@10V | |
| Betriebstemperatur - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 110pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 37W | |
| Drain to Source Voltage | 200V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 18A | |
| Ciss-Input Capacitance | 860pF | |
| Output Capacitance(Coss) | 260pF | |
| Gate Charge(Qg) | 16nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.8320 | $ 0.8320 |
| 10+ | $0.6701 | $ 6.7010 |
| 50+ | $0.5891 | $ 29.4550 |
| 100+ | $0.5081 | $ 50.8100 |
| 500+ | $0.4605 | $ 230.2500 |
| 1000+ | $0.4351 | $ 435.1000 |
