15% off
| Hersteller | |
| Hersteller-Teilenummer | IRF541-VB |
| EBEE-Teilenummer | E819711248 |
| Gehäuse | TO-220AB |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 60V 25A 1 N-channel TO-220AB MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.4130 | $ 0.4130 |
| 10+ | $0.3280 | $ 3.2800 |
| 50+ | $0.2916 | $ 14.5800 |
| 100+ | $0.2457 | $ 24.5700 |
| 500+ | $0.2254 | $ 112.7000 |
| 1000+ | $0.2133 | $ 213.3000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VBsemi Elec IRF541-VB | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 72mΩ@10V | |
| Betriebstemperatur - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 79pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 60W | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Current - Continuous Drain(Id) | 20A | |
| Ciss-Input Capacitance | 640pF | |
| Output Capacitance(Coss) | 360pF | |
| Gate Charge(Qg) | 25nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.4130 | $ 0.4130 |
| 10+ | $0.3280 | $ 3.2800 |
| 50+ | $0.2916 | $ 14.5800 |
| 100+ | $0.2457 | $ 24.5700 |
| 500+ | $0.2254 | $ 112.7000 |
| 1000+ | $0.2133 | $ 213.3000 |
