5% off
| Hersteller | |
| Hersteller-Teilenummer | IRF520NS-VB |
| EBEE-Teilenummer | E8725067 |
| Gehäuse | TO-263(D2PAK) |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 100V 20A 105W 3V@250uA 1 N-channel TO-263-2 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.6757 | $ 0.6757 |
| 10+ | $0.5612 | $ 5.6120 |
| 30+ | $0.5038 | $ 15.1140 |
| 100+ | $0.3937 | $ 39.3700 |
| 500+ | $0.3590 | $ 179.5000 |
| 800+ | $0.3410 | $ 272.8000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VBsemi Elec IRF520NS-VB | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 100mΩ@10V | |
| Betriebstemperatur - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 110pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 105W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Current - Continuous Drain(Id) | 20A | |
| Ciss-Input Capacitance | 950pF | |
| Output Capacitance(Coss) | 280pF | |
| Gate Charge(Qg) | 28nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.6757 | $ 0.6757 |
| 10+ | $0.5612 | $ 5.6120 |
| 30+ | $0.5038 | $ 15.1140 |
| 100+ | $0.3937 | $ 39.3700 |
| 500+ | $0.3590 | $ 179.5000 |
| 800+ | $0.3410 | $ 272.8000 |
