| Hersteller | |
| Hersteller-Teilenummer | IRF520A-VB |
| EBEE-Teilenummer | E822389311 |
| Gehäuse | TO-220AB |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | TO-220AB MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.5484 | $ 0.5484 |
| 10+ | $0.4307 | $ 4.3070 |
| 50+ | $0.3815 | $ 19.0750 |
| 100+ | $0.3179 | $ 31.7900 |
| 500+ | $0.2893 | $ 144.6500 |
| 1000+ | $0.2734 | $ 273.4000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VBsemi Elec IRF520A-VB | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 127mΩ@10V | |
| Betriebstemperatur - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 110pF | |
| Pd - Power Dissipation | 105W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 18A | |
| Ciss-Input Capacitance | 1.3nF | |
| Output Capacitance(Coss) | 260pF | |
| Gate Charge(Qg) | 28nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.5484 | $ 0.5484 |
| 10+ | $0.4307 | $ 4.3070 |
| 50+ | $0.3815 | $ 19.0750 |
| 100+ | $0.3179 | $ 31.7900 |
| 500+ | $0.2893 | $ 144.6500 |
| 1000+ | $0.2734 | $ 273.4000 |
