15% off
| Hersteller | |
| Hersteller-Teilenummer | HM3406B-VB |
| EBEE-Teilenummer | E819190148 |
| Gehäuse | SOT-23(TO-236) |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 30V 6.5A 1.7W 30mΩ@10V,3.2A 1.1V@250uA 1 N-channel SOT-23 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.0851 | $ 0.4255 |
| 50+ | $0.0679 | $ 3.3950 |
| 150+ | $0.0593 | $ 8.8950 |
| 500+ | $0.0529 | $ 26.4500 |
| 3000+ | $0.0478 | $ 143.4000 |
| 6000+ | $0.0451 | $ 270.6000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VBsemi Elec HM3406B-VB | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 30mΩ@10V;33mΩ@4.5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 17pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 1.7W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 1.1V | |
| Current - Continuous Drain(Id) | 6.5A | |
| Ciss-Input Capacitance | 335pF | |
| Output Capacitance(Coss) | 45pF | |
| Gate Charge(Qg) | 4.5nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.0851 | $ 0.4255 |
| 50+ | $0.0679 | $ 3.3950 |
| 150+ | $0.0593 | $ 8.8950 |
| 500+ | $0.0529 | $ 26.4500 |
| 3000+ | $0.0478 | $ 143.4000 |
| 6000+ | $0.0451 | $ 270.6000 |
