15% off
| Hersteller | |
| Hersteller-Teilenummer | FQT3P20TF-VB |
| EBEE-Teilenummer | E87569007 |
| Gehäuse | SOT-223 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 200V 2A 1 Piece P-Channel SOT-223 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.1801 | $ 1.1801 |
| 10+ | $0.9662 | $ 9.6620 |
| 30+ | $0.8492 | $ 25.4760 |
| 100+ | $0.7160 | $ 71.6000 |
| 500+ | $0.6581 | $ 329.0500 |
| 1000+ | $0.6311 | $ 631.1000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VBsemi Elec FQT3P20TF-VB | |
| RoHS | ||
| Typ | P-Channel | |
| Konfiguration | - | |
| RDS(on) | 800mΩ@10V;900mΩ@6V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 16pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | - | |
| Drain to Source Voltage | 200V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Current - Continuous Drain(Id) | 2A | |
| Ciss-Input Capacitance | 370pF | |
| Output Capacitance(Coss) | 28pF | |
| Gate Charge(Qg) | 8nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.1801 | $ 1.1801 |
| 10+ | $0.9662 | $ 9.6620 |
| 30+ | $0.8492 | $ 25.4760 |
| 100+ | $0.7160 | $ 71.6000 |
| 500+ | $0.6581 | $ 329.0500 |
| 1000+ | $0.6311 | $ 631.1000 |
