15% off
| Hersteller | |
| Hersteller-Teilenummer | FDP2572-VB |
| EBEE-Teilenummer | E820755497 |
| Gehäuse | TO-220AB |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 150V 50A 30mΩ@10V 1 N-channel TO-220 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.2390 | $ 1.2390 |
| 10+ | $1.0243 | $ 10.2430 |
| 50+ | $0.9070 | $ 45.3500 |
| 100+ | $0.7733 | $ 77.3300 |
| 500+ | $0.7139 | $ 356.9500 |
| 1000+ | $0.6883 | $ 688.3000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VBsemi Elec FDP2572-VB | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 30mΩ@10V | |
| Betriebstemperatur - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 190pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 165W | |
| Drain to Source Voltage | 150V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 50A | |
| Ciss-Input Capacitance | 2.5nF | |
| Output Capacitance(Coss) | 290pF | |
| Gate Charge(Qg) | 38nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.2390 | $ 1.2390 |
| 10+ | $1.0243 | $ 10.2430 |
| 50+ | $0.9070 | $ 45.3500 |
| 100+ | $0.7733 | $ 77.3300 |
| 500+ | $0.7139 | $ 356.9500 |
| 1000+ | $0.6883 | $ 688.3000 |
