15% off
| Hersteller | |
| Hersteller-Teilenummer | FDMS0312S-VB |
| EBEE-Teilenummer | E87494624 |
| Gehäuse | DFN5x6-8 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 30V 21A 35W 1V@250uA 1 N-channel DFN-8(5X6) MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.7072 | $ 0.7072 |
| 10+ | $0.5777 | $ 5.7770 |
| 30+ | $0.5129 | $ 15.3870 |
| 100+ | $0.4495 | $ 44.9500 |
| 500+ | $0.3658 | $ 182.9000 |
| 1000+ | $0.3469 | $ 346.9000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VBsemi Elec FDMS0312S-VB | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 3mΩ@10V;5mΩ@4.5V | |
| Betriebstemperatur - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 970pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 35W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Current - Continuous Drain(Id) | 21A | |
| Ciss-Input Capacitance | 3.2nF | |
| Output Capacitance(Coss) | 1.025nF | |
| Gate Charge(Qg) | 71nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.7072 | $ 0.7072 |
| 10+ | $0.5777 | $ 5.7770 |
| 30+ | $0.5129 | $ 15.3870 |
| 100+ | $0.4495 | $ 44.9500 |
| 500+ | $0.3658 | $ 182.9000 |
| 1000+ | $0.3469 | $ 346.9000 |
