15% off
| Hersteller | |
| Hersteller-Teilenummer | FDMC8882-VB |
| EBEE-Teilenummer | E87463508 |
| Gehäuse | DFN3x3-8 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 30V 30A 30W 3V@250uA 1 N-channel QFN8(3X3) MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.5035 | $ 0.5035 |
| 10+ | $0.4036 | $ 4.0360 |
| 30+ | $0.3604 | $ 10.8120 |
| 100+ | $0.3077 | $ 30.7700 |
| 500+ | $0.2578 | $ 128.9000 |
| 1000+ | $0.2429 | $ 242.9000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VBsemi Elec FDMC8882-VB | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 13mΩ@10V;19mΩ@4.5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 20pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 60W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Current - Continuous Drain(Id) | 30A | |
| Ciss-Input Capacitance | 900pF | |
| Output Capacitance(Coss) | 236pF | |
| Gate Charge(Qg) | 20nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.5035 | $ 0.5035 |
| 10+ | $0.4036 | $ 4.0360 |
| 30+ | $0.3604 | $ 10.8120 |
| 100+ | $0.3077 | $ 30.7700 |
| 500+ | $0.2578 | $ 128.9000 |
| 1000+ | $0.2429 | $ 242.9000 |
