15% off
| Hersteller | |
| Hersteller-Teilenummer | FDC640P-VB |
| EBEE-Teilenummer | E822389192 |
| Gehäuse | TSOP-6 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | SOT-23-6 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.1946 | $ 0.9730 |
| 50+ | $0.1544 | $ 7.7200 |
| 150+ | $0.1372 | $ 20.5800 |
| 500+ | $0.1158 | $ 57.9000 |
| 3000+ | $0.1063 | $ 318.9000 |
| 6000+ | $0.1005 | $ 603.0000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VBsemi Elec FDC640P-VB | |
| RoHS | ||
| Typ | P-Channel | |
| RDS(on) | 49mΩ@10V;54mΩ@4.5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 63pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 3W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Current - Continuous Drain(Id) | 4.8A | |
| Ciss-Input Capacitance | 450pF | |
| Output Capacitance(Coss) | 80pF | |
| Gate Charge(Qg) | 10nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.1946 | $ 0.9730 |
| 50+ | $0.1544 | $ 7.7200 |
| 150+ | $0.1372 | $ 20.5800 |
| 500+ | $0.1158 | $ 57.9000 |
| 3000+ | $0.1063 | $ 318.9000 |
| 6000+ | $0.1005 | $ 603.0000 |
