15% off
| Hersteller | |
| Hersteller-Teilenummer | E10P02-VB |
| EBEE-Teilenummer | E8725016 |
| Gehäuse | SO-8 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 20V 13A 1.9W 500mV@250uA 1 Piece P-Channel SOP-8 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.3158 | $ 1.5790 |
| 50+ | $0.2499 | $ 12.4950 |
| 150+ | $0.2217 | $ 33.2550 |
| 500+ | $0.1865 | $ 93.2500 |
| 2500+ | $0.1708 | $ 427.0000 |
| 4000+ | $0.1613 | $ 645.2000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VBsemi Elec E10P02-VB | |
| RoHS | ||
| Typ | P-Channel | |
| RDS(on) | 15mΩ@4.5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | - | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 19W | |
| Drain to Source Voltage | 20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Current - Continuous Drain(Id) | 13A | |
| Ciss-Input Capacitance | - | |
| Gate Charge(Qg) | 50nC@8V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.3158 | $ 1.5790 |
| 50+ | $0.2499 | $ 12.4950 |
| 150+ | $0.2217 | $ 33.2550 |
| 500+ | $0.1865 | $ 93.2500 |
| 2500+ | $0.1708 | $ 427.0000 |
| 4000+ | $0.1613 | $ 645.2000 |
