| Hersteller | |
| Hersteller-Teilenummer | CMP80N03-VB |
| EBEE-Teilenummer | E829779542 |
| Gehäuse | TO-220AB |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 30V 28.8A 175W 0.003Ω@10V,28.8A 2.5V@250uA TO-220AB MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.6240 | $ 0.6240 |
| 10+ | $0.5018 | $ 5.0180 |
| 50+ | $0.4414 | $ 22.0700 |
| 100+ | $0.3811 | $ 38.1100 |
| 500+ | $0.3462 | $ 173.1000 |
| 1000+ | $0.3271 | $ 327.1000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VBsemi Elec CMP80N03-VB | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 4mΩ@4.5V | |
| Betriebstemperatur - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 370pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 250W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 120A | |
| Ciss-Input Capacitance | 3.1nF | |
| Output Capacitance(Coss) | 725pF | |
| Gate Charge(Qg) | 257nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.6240 | $ 0.6240 |
| 10+ | $0.5018 | $ 5.0180 |
| 50+ | $0.4414 | $ 22.0700 |
| 100+ | $0.3811 | $ 38.1100 |
| 500+ | $0.3462 | $ 173.1000 |
| 1000+ | $0.3271 | $ 327.1000 |
