15% off
| Hersteller | |
| Hersteller-Teilenummer | CEM4936-VB |
| EBEE-Teilenummer | E8709931 |
| Gehäuse | SO-8 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 30V 6.8A 1.77W 1V@250uA 2 N-Channel SO-8 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.2934 | $ 1.4670 |
| 50+ | $0.2329 | $ 11.6450 |
| 150+ | $0.2070 | $ 31.0500 |
| 500+ | $0.1746 | $ 87.3000 |
| 2500+ | $0.1602 | $ 400.5000 |
| 4000+ | $0.1516 | $ 606.4000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VBsemi Elec CEM4936-VB | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 22mΩ@10V;26mΩ@4.5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 55pF | |
| Number | 2 N-Channel | |
| Pd - Power Dissipation | 2.7W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Current - Continuous Drain(Id) | 6.8A | |
| Ciss-Input Capacitance | 586pF | |
| Output Capacitance(Coss) | 117pF | |
| Gate Charge(Qg) | 15nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.2934 | $ 1.4670 |
| 50+ | $0.2329 | $ 11.6450 |
| 150+ | $0.2070 | $ 31.0500 |
| 500+ | $0.1746 | $ 87.3000 |
| 2500+ | $0.1602 | $ 400.5000 |
| 4000+ | $0.1516 | $ 606.4000 |
