| Hersteller | |
| Hersteller-Teilenummer | CED540L-VB |
| EBEE-Teilenummer | E829779278 |
| Gehäuse | TO-251 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 100V 35A 0.036Ω@10V,3A 96W 2V@250uA TO-251 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.7780 | $ 0.7780 |
| 10+ | $0.6272 | $ 6.2720 |
| 30+ | $0.5510 | $ 16.5300 |
| 80+ | $0.4764 | $ 38.1120 |
| 480+ | $0.4303 | $ 206.5440 |
| 960+ | $0.4081 | $ 391.7760 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VBsemi Elec CED540L-VB | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 36mΩ@10V | |
| Betriebstemperatur - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 180pF | |
| Pd - Power Dissipation | 96W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 35A | |
| Ciss-Input Capacitance | 4nF | |
| Output Capacitance(Coss) | 500pF | |
| Gate Charge(Qg) | 34nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.7780 | $ 0.7780 |
| 10+ | $0.6272 | $ 6.2720 |
| 30+ | $0.5510 | $ 16.5300 |
| 80+ | $0.4764 | $ 38.1120 |
| 480+ | $0.4303 | $ 206.5440 |
| 960+ | $0.4081 | $ 391.7760 |
