| Hersteller | |
| Hersteller-Teilenummer | CED3301-VB |
| EBEE-Teilenummer | E822389714 |
| Gehäuse | TO-251 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | TO-251 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.4668 | $ 0.4668 |
| 10+ | $0.3668 | $ 3.6680 |
| 30+ | $0.3239 | $ 9.7170 |
| 80+ | $0.2700 | $ 21.6000 |
| 480+ | $0.2461 | $ 118.1280 |
| 960+ | $0.2319 | $ 222.6240 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VBsemi Elec CED3301-VB | |
| RoHS | ||
| Typ | P-Channel | |
| RDS(on) | 18mΩ@10V;22mΩ@4.5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 145pF | |
| Pd - Power Dissipation | 40W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 40A | |
| Ciss-Input Capacitance | 1.455nF | |
| Output Capacitance(Coss) | 180pF | |
| Gate Charge(Qg) | 25nC@10V;[email protected] |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.4668 | $ 0.4668 |
| 10+ | $0.3668 | $ 3.6680 |
| 30+ | $0.3239 | $ 9.7170 |
| 80+ | $0.2700 | $ 21.6000 |
| 480+ | $0.2461 | $ 118.1280 |
| 960+ | $0.2319 | $ 222.6240 |
