15% off
| Hersteller | |
| Hersteller-Teilenummer | C3028LD-VB |
| EBEE-Teilenummer | E8709927 |
| Gehäuse | SO-8 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 30V 6.8A 2W 1 N-Channel + 1 P-Channel SO-8 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.3388 | $ 0.3388 |
| 10+ | $0.2686 | $ 2.6860 |
| 30+ | $0.2376 | $ 7.1280 |
| 100+ | $0.1998 | $ 19.9800 |
| 500+ | $0.1742 | $ 87.1000 |
| 1000+ | $0.1634 | $ 163.4000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VBsemi Elec C3028LD-VB | |
| RoHS | ||
| RDS(on) | - | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 33pF | |
| Number | 1 N-Channel + 1 P-Channel | |
| Pd - Power Dissipation | 2W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | - | |
| Current - Continuous Drain(Id) | 6.8A | |
| Ciss-Input Capacitance | 510pF | |
| Gate Charge(Qg) | 5.8nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.3388 | $ 0.3388 |
| 10+ | $0.2686 | $ 2.6860 |
| 30+ | $0.2376 | $ 7.1280 |
| 100+ | $0.1998 | $ 19.9800 |
| 500+ | $0.1742 | $ 87.1000 |
| 1000+ | $0.1634 | $ 163.4000 |
