15% off
| Hersteller | |
| Hersteller-Teilenummer | BTS100-VB |
| EBEE-Teilenummer | E820755223 |
| Gehäuse | TO-220AB |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 60V 40A 62mΩ@10V 1 Piece P-Channel TO-220 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.5952 | $ 0.5952 |
| 10+ | $0.4845 | $ 4.8450 |
| 50+ | $0.4278 | $ 21.3900 |
| 100+ | $0.3726 | $ 37.2600 |
| 500+ | $0.3401 | $ 170.0500 |
| 1000+ | $0.3226 | $ 322.6000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VBsemi Elec BTS100-VB | |
| RoHS | ||
| Typ | P-Channel | |
| RDS(on) | 62mΩ@10V | |
| Betriebstemperatur - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 90pF | |
| Number | 1 P-Channel | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Current - Continuous Drain(Id) | 40A | |
| Ciss-Input Capacitance | 1.3nF | |
| Output Capacitance(Coss) | 120pF | |
| Gate Charge(Qg) | 13nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.5952 | $ 0.5952 |
| 10+ | $0.4845 | $ 4.8450 |
| 50+ | $0.4278 | $ 21.3900 |
| 100+ | $0.3726 | $ 37.2600 |
| 500+ | $0.3401 | $ 170.0500 |
| 1000+ | $0.3226 | $ 322.6000 |
