15% off
| Hersteller | |
| Hersteller-Teilenummer | BSP106-VB |
| EBEE-Teilenummer | E820755475 |
| Gehäuse | SOT-223 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 60V 4.5A 76mΩ@10V 1 N-channel SOT-223 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.2819 | $ 1.4095 |
| 50+ | $0.2213 | $ 11.0650 |
| 150+ | $0.1954 | $ 29.3100 |
| 500+ | $0.1630 | $ 81.5000 |
| 2500+ | $0.1487 | $ 371.7500 |
| 5000+ | $0.1400 | $ 700.0000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VBsemi Elec BSP106-VB | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 85mΩ@4.5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 100pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 4W | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 4.5A | |
| Ciss-Input Capacitance | 810pF | |
| Output Capacitance(Coss) | 120pF | |
| Gate Charge(Qg) | 33nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.2819 | $ 1.4095 |
| 50+ | $0.2213 | $ 11.0650 |
| 150+ | $0.1954 | $ 29.3100 |
| 500+ | $0.1630 | $ 81.5000 |
| 2500+ | $0.1487 | $ 371.7500 |
| 5000+ | $0.1400 | $ 700.0000 |
