15% off
| Hersteller | |
| Hersteller-Teilenummer | 4606-VB |
| EBEE-Teilenummer | E83040325 |
| Gehäuse | SO-8 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 30V 6.8A 2W 0.04Ω@10V,8A 1V@250uA 1 N-Channel + 1 P-Channel SO-8 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.3469 | $ 0.3469 |
| 10+ | $0.2767 | $ 2.7670 |
| 30+ | $0.2457 | $ 7.3710 |
| 100+ | $0.2092 | $ 20.9200 |
| 500+ | $0.1863 | $ 93.1500 |
| 1000+ | $0.1755 | $ 175.5000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VBsemi Elec 4606-VB | |
| RoHS | ||
| Typ | N-Channel + P-Channel | |
| RDS(on) | 50mΩ@4.5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 57pF | |
| Number | 1 N-Channel + 1 P-Channel | |
| Pd - Power Dissipation | 3.1W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Current - Continuous Drain(Id) | 8A | |
| Ciss-Input Capacitance | 620pF | |
| Output Capacitance(Coss) | 115pF | |
| Gate Charge(Qg) | 63nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.3469 | $ 0.3469 |
| 10+ | $0.2767 | $ 2.7670 |
| 30+ | $0.2457 | $ 7.3710 |
| 100+ | $0.2092 | $ 20.9200 |
| 500+ | $0.1863 | $ 93.1500 |
| 1000+ | $0.1755 | $ 175.5000 |
