15% off
| Hersteller | |
| Hersteller-Teilenummer | 2SJ542-VB |
| EBEE-Teilenummer | E819711205 |
| Gehäuse | TO-220AB |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 60V 30A 1 Piece P-Channel TO-220AB MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.6963 | $ 0.6963 |
| 10+ | $0.5666 | $ 5.6660 |
| 50+ | $0.5011 | $ 25.0550 |
| 100+ | $0.4370 | $ 43.7000 |
| 500+ | $0.3974 | $ 198.7000 |
| 1000+ | $0.3783 | $ 378.3000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VBsemi Elec 2SJ542-VB | |
| RoHS | ||
| Typ | P-Channel | |
| RDS(on) | 48mΩ@10V;56mΩ@4.5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 280pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 41.7W | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Current - Continuous Drain(Id) | 45A | |
| Ciss-Input Capacitance | 2.065nF | |
| Output Capacitance(Coss) | 330pF | |
| Gate Charge(Qg) | 67nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.6963 | $ 0.6963 |
| 10+ | $0.5666 | $ 5.6660 |
| 50+ | $0.5011 | $ 25.0550 |
| 100+ | $0.4370 | $ 43.7000 |
| 500+ | $0.3974 | $ 198.7000 |
| 1000+ | $0.3783 | $ 378.3000 |
