15% off
| Hersteller | |
| Hersteller-Teilenummer | 2SJ511-VB |
| EBEE-Teilenummer | E820755057 |
| Gehäuse | SOT-89 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 30V 5.8A 50mΩ@10V 1 Piece P-Channel SOT-89-3 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.2209 | $ 1.1045 |
| 50+ | $0.1754 | $ 8.7700 |
| 150+ | $0.1558 | $ 23.3700 |
| 1000+ | $0.1315 | $ 131.5000 |
| 2000+ | $0.1206 | $ 241.2000 |
| 5000+ | $0.1141 | $ 570.5000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | VBsemi Elec 2SJ511-VB | |
| RoHS | ||
| Typ | P-Channel | |
| RDS(on) | 50mΩ@10V;56mΩ@4.5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 145pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 6.5W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 7.6A | |
| Ciss-Input Capacitance | 1.395nF | |
| Output Capacitance(Coss) | 180pF | |
| Gate Charge(Qg) | 25nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.2209 | $ 1.1045 |
| 50+ | $0.1754 | $ 8.7700 |
| 150+ | $0.1558 | $ 23.3700 |
| 1000+ | $0.1315 | $ 131.5000 |
| 2000+ | $0.1206 | $ 241.2000 |
| 5000+ | $0.1141 | $ 570.5000 |
