| Hersteller | |
| Hersteller-Teilenummer | TSK65R140SD |
| EBEE-Teilenummer | E839832945 |
| Gehäuse | TO-247 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 650V 25A 207W 0.14Ω@10V,11A 5V@250uA 1 N-channel TO-247 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.6877 | $ 1.6877 |
| 10+ | $1.4289 | $ 14.2890 |
| 30+ | $1.2662 | $ 37.9860 |
| 90+ | $1.1003 | $ 99.0270 |
| 510+ | $1.0244 | $ 522.4440 |
| 990+ | $0.9919 | $ 981.9810 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | Truesemi TSK65R140SD | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 140mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 1.6pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 207W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Current - Continuous Drain(Id) | 25A | |
| Ciss-Input Capacitance | 1.595nF | |
| Output Capacitance(Coss) | 90pF | |
| Gate Charge(Qg) | 46nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.6877 | $ 1.6877 |
| 10+ | $1.4289 | $ 14.2890 |
| 30+ | $1.2662 | $ 37.9860 |
| 90+ | $1.1003 | $ 99.0270 |
| 510+ | $1.0244 | $ 522.4440 |
| 990+ | $0.9919 | $ 981.9810 |
