| Hersteller | |
| Hersteller-Teilenummer | TSK65R099 |
| EBEE-Teilenummer | E839832946 |
| Gehäuse | TO-247 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 650V 31A 255W 0.09Ω@10V,17A 2.9V@250uA 1 N-channel TO-247 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $2.0534 | $ 2.0534 |
| 10+ | $1.7528 | $ 17.5280 |
| 30+ | $1.4645 | $ 43.9350 |
| 90+ | $1.2724 | $ 114.5160 |
| 510+ | $1.1856 | $ 604.6560 |
| 990+ | $1.1468 | $ 1135.3320 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | Truesemi TSK65R099 | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 103mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 2.2pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 255W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 4.9V | |
| Current - Continuous Drain(Id) | 31A | |
| Ciss-Input Capacitance | 1.9nF | |
| Output Capacitance(Coss) | 117pF | |
| Gate Charge(Qg) | 70nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $2.0534 | $ 2.0534 |
| 10+ | $1.7528 | $ 17.5280 |
| 30+ | $1.4645 | $ 43.9350 |
| 90+ | $1.2724 | $ 114.5160 |
| 510+ | $1.1856 | $ 604.6560 |
| 990+ | $1.1468 | $ 1135.3320 |
