| Hersteller | |
| Hersteller-Teilenummer | TMP3060DF |
| EBEE-Teilenummer | E87422958 |
| Gehäuse | DFN3x3-8L |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 30V 60A 37W 7.5mΩ@10V,30A 1V@250uA 1 Piece P-Channel PDFN3x3-8L MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.2219 | $ 1.1095 |
| 50+ | $0.1754 | $ 8.7700 |
| 150+ | $0.1555 | $ 23.3250 |
| 500+ | $0.1306 | $ 65.3000 |
| 2500+ | $0.1196 | $ 299.0000 |
| 5000+ | $0.1129 | $ 564.5000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | Tritech-MOS TMP3060DF | |
| RoHS | ||
| RDS(on) | 7.5mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 283pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | - | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | - | |
| Current - Continuous Drain(Id) | 60A | |
| Ciss-Input Capacitance | 2.396nF | |
| Gate Charge(Qg) | 30nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.2219 | $ 1.1095 |
| 50+ | $0.1754 | $ 8.7700 |
| 150+ | $0.1555 | $ 23.3250 |
| 500+ | $0.1306 | $ 65.3000 |
| 2500+ | $0.1196 | $ 299.0000 |
| 5000+ | $0.1129 | $ 564.5000 |
