| Hersteller | |
| Hersteller-Teilenummer | TK6A60D |
| EBEE-Teilenummer | E82979101 |
| Gehäuse | TO-220F-3 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 600V 6A 40W 1Ω@10V,3A 4V@1mA 1 N-channel TO-220F-3 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.3760 | $ 1.3760 |
| 10+ | $1.1316 | $ 11.3160 |
| 50+ | $0.9973 | $ 49.8650 |
| 100+ | $0.8449 | $ 84.4900 |
| 500+ | $0.7785 | $ 389.2500 |
| 1000+ | $0.7469 | $ 746.9000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | TOSHIBA TK6A60D | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 1.25Ω@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 4pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 40W | |
| Drain to Source Voltage | 600V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 6A | |
| Ciss-Input Capacitance | 800pF | |
| Output Capacitance(Coss) | 100pF | |
| Gate Charge(Qg) | 16nC |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.3760 | $ 1.3760 |
| 10+ | $1.1316 | $ 11.3160 |
| 50+ | $0.9973 | $ 49.8650 |
| 100+ | $0.8449 | $ 84.4900 |
| 500+ | $0.7785 | $ 389.2500 |
| 1000+ | $0.7469 | $ 746.9000 |
