| Hersteller | |
| Hersteller-Teilenummer | TDM3436 |
| EBEE-Teilenummer | E8380232 |
| Gehäuse | DFN-8(5x6) |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 40V 25A 3.1mΩ@10V,25A 2.7W 2.5V@250uA 1 N-channel DFN-8-EP(5.8x5.3) MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.5274 | $ 2.6370 |
| 50+ | $0.4244 | $ 21.2200 |
| 150+ | $0.3738 | $ 56.0700 |
| 500+ | $0.3152 | $ 157.6000 |
| 3000+ | $0.2851 | $ 855.3000 |
| 6000+ | $0.2693 | $ 1615.8000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | Techcode TDM3436 | |
| RoHS | ||
| RDS(on) | 4.1mΩ@4.5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 88pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 2.7W | |
| Drain to Source Voltage | 40V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 100A | |
| Ciss-Input Capacitance | 2.65nF | |
| Gate Charge(Qg) | [email protected] |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.5274 | $ 2.6370 |
| 50+ | $0.4244 | $ 21.2200 |
| 150+ | $0.3738 | $ 56.0700 |
| 500+ | $0.3152 | $ 157.6000 |
| 3000+ | $0.2851 | $ 855.3000 |
| 6000+ | $0.2693 | $ 1615.8000 |
