| Hersteller | |
| Hersteller-Teilenummer | TDM3424 |
| EBEE-Teilenummer | E8429900 |
| Gehäuse | SOT-89 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 30V 8A 23mΩ@10V,8A 3.5W 3V@250uA 1 N-channel SOT-89 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.2744 | $ 0.2744 |
| 10+ | $0.2174 | $ 2.1740 |
| 30+ | $0.1929 | $ 5.7870 |
| 100+ | $0.1624 | $ 16.2400 |
| 500+ | $0.1489 | $ 74.4500 |
| 1000+ | $0.1407 | $ 140.7000 |
| 3000+ | $0.1390 | $ 417.0000 |
| 6000+ | $0.1379 | $ 827.4000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | Techcode TDM3424 | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 23mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 40pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 3.5W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Current - Continuous Drain(Id) | 8A | |
| Ciss-Input Capacitance | 410pF | |
| Output Capacitance(Coss) | 70pF | |
| Gate Charge(Qg) | [email protected] |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.2744 | $ 0.2744 |
| 10+ | $0.2174 | $ 2.1740 |
| 30+ | $0.1929 | $ 5.7870 |
| 100+ | $0.1624 | $ 16.2400 |
| 500+ | $0.1489 | $ 74.4500 |
| 1000+ | $0.1407 | $ 140.7000 |
| 3000+ | $0.1390 | $ 417.0000 |
| 6000+ | $0.1379 | $ 827.4000 |
