| Hersteller | |
| Hersteller-Teilenummer | TPM30V8PBS8-2 |
| EBEE-Teilenummer | E84355032 |
| Gehäuse | SOP-8 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 30V 8A 3W 18mΩ@10V 2.5V@250uA 2 P-Channel SOP-8 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.3289 | $ 0.3289 |
| 10+ | $0.2889 | $ 2.8890 |
| 30+ | $0.2736 | $ 8.2080 |
| 100+ | $0.2521 | $ 25.2100 |
| 500+ | $0.2121 | $ 106.0500 |
| 1000+ | $0.2075 | $ 207.5000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | TECH PUBLIC TPM30V8PBS8-2 | |
| RoHS | ||
| RDS(on) | 18mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 285pF | |
| Number | 2 P-Channel | |
| Pd - Power Dissipation | 3W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 8A | |
| Ciss-Input Capacitance | 1.65nF | |
| Gate Charge(Qg) | 39nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.3289 | $ 0.3289 |
| 10+ | $0.2889 | $ 2.8890 |
| 30+ | $0.2736 | $ 8.2080 |
| 100+ | $0.2521 | $ 25.2100 |
| 500+ | $0.2121 | $ 106.0500 |
| 1000+ | $0.2075 | $ 207.5000 |
