| Hersteller | |
| Hersteller-Teilenummer | SI2333DDS |
| EBEE-Teilenummer | E85122041 |
| Gehäuse | SOT-23-3 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 20V 6A 28mΩ@2.5V,5A 1.8W 400mV@250uA SOT-23-3 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.1276 | $ 0.6380 |
| 50+ | $0.1026 | $ 5.1300 |
| 150+ | $0.0901 | $ 13.5150 |
| 500+ | $0.0808 | $ 40.4000 |
| 3000+ | $0.0632 | $ 189.6000 |
| 6000+ | $0.0595 | $ 357.0000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | TECH PUBLIC SI2333DDS | |
| RoHS | ||
| RDS(on) | 28mΩ@2.5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 210pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 1.8W | |
| Drain to Source Voltage | 20V | |
| Gate Threshold Voltage (Vgs(th)) | 400mV | |
| Current - Continuous Drain(Id) | 6A | |
| Ciss-Input Capacitance | 1.73nF | |
| Gate Charge(Qg) | [email protected] |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.1276 | $ 0.6380 |
| 50+ | $0.1026 | $ 5.1300 |
| 150+ | $0.0901 | $ 13.5150 |
| 500+ | $0.0808 | $ 40.4000 |
| 3000+ | $0.0632 | $ 189.6000 |
| 6000+ | $0.0595 | $ 357.0000 |
