| Hersteller | |
| Hersteller-Teilenummer | STW68N65DM6-4AG |
| EBEE-Teilenummer | E83290746 |
| Gehäuse | TO-247-4 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 650V 72A 480W 39mΩ@10V,36A 4.75V@250uA 1 N-channel TO-247-4 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $13.5924 | $ 13.5924 |
| 10+ | $12.9923 | $ 129.9230 |
| 30+ | $11.9543 | $ 358.6290 |
| 100+ | $11.0487 | $ 1104.8700 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | ST STW68N65DM6-4AG | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 39mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 2.6pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 480W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 4.75V | |
| Current - Continuous Drain(Id) | 72A | |
| Ciss-Input Capacitance | 5.9nF | |
| Output Capacitance(Coss) | 260pF | |
| Gate Charge(Qg) | 118nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $13.5924 | $ 13.5924 |
| 10+ | $12.9923 | $ 129.9230 |
| 30+ | $11.9543 | $ 358.6290 |
| 100+ | $11.0487 | $ 1104.8700 |
