| Hersteller | |
| Hersteller-Teilenummer | STW3N150 |
| EBEE-Teilenummer | E892238 |
| Gehäuse | TO-247 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 1.5kV 2.5A 140W 9Ω@10V,1.3A 4V@250uA 1 N-channel TO-247-3 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $2.2553 | $ 2.2553 |
| 10+ | $1.9874 | $ 19.8740 |
| 30+ | $1.8199 | $ 54.5970 |
| 100+ | $1.6492 | $ 164.9200 |
| 500+ | $1.5711 | $ 785.5500 |
| 1000+ | $1.5376 | $ 1537.6000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | ST STW3N150 | |
| RoHS | ||
| RDS(on) | - | |
| Betriebstemperatur - | -50℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 13.2pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 140W | |
| Drain to Source Voltage | 1.5kV | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 2.5A | |
| Ciss-Input Capacitance | 939pF | |
| Gate Charge(Qg) | 29.3nC@1200V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $2.2553 | $ 2.2553 |
| 10+ | $1.9874 | $ 19.8740 |
| 30+ | $1.8199 | $ 54.5970 |
| 100+ | $1.6492 | $ 164.9200 |
| 500+ | $1.5711 | $ 785.5500 |
| 1000+ | $1.5376 | $ 1537.6000 |
