| Hersteller | |
| Hersteller-Teilenummer | STU2N80K5 |
| EBEE-Teilenummer | E8377965 |
| Gehäuse | IPAK |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 800V 2A 45W 3.5Ω@10V,1A 4V@100uA 1 N-channel TO-251 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.8359 | $ 0.8359 |
| 10+ | $0.8185 | $ 8.1850 |
| 30+ | $0.8058 | $ 24.1740 |
| 100+ | $0.7932 | $ 79.3200 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | ST STU2N80K5 | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 4.5Ω@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 0.5pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 45W | |
| Drain to Source Voltage | 800V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Current - Continuous Drain(Id) | 2A | |
| Ciss-Input Capacitance | 105pF | |
| Output Capacitance(Coss) | 8pF | |
| Gate Charge(Qg) | 5nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.8359 | $ 0.8359 |
| 10+ | $0.8185 | $ 8.1850 |
| 30+ | $0.8058 | $ 24.1740 |
| 100+ | $0.7932 | $ 79.3200 |
