| Hersteller | |
| Hersteller-Teilenummer | STS7P4LLF6 |
| EBEE-Teilenummer | E83279767 |
| Gehäuse | SO-8 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 40V 7A 2.7W 20.5mΩ@4.5V,3.5A 1 Piece P-Channel SO-8 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $4.7991 | $ 4.7991 |
| 10+ | $4.1392 | $ 41.3920 |
| 30+ | $3.7470 | $ 112.4100 |
| 100+ | $3.3501 | $ 335.0100 |
| 500+ | $3.1674 | $ 1583.7000 |
| 1000+ | $3.0855 | $ 3085.5000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | ST STS7P4LLF6 | |
| RoHS | ||
| Typ | P-Channel | |
| Konfiguration | - | |
| RDS(on) | 20.5mΩ@10V | |
| Betriebstemperatur - | -40℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 180pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 2.7W | |
| Drain to Source Voltage | 40V | |
| Gate Threshold Voltage (Vgs(th)) | - | |
| Current - Continuous Drain(Id) | 7A | |
| Ciss-Input Capacitance | 2.85nF | |
| Gate Charge(Qg) | [email protected] |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $4.7991 | $ 4.7991 |
| 10+ | $4.1392 | $ 41.3920 |
| 30+ | $3.7470 | $ 112.4100 |
| 100+ | $3.3501 | $ 335.0100 |
| 500+ | $3.1674 | $ 1583.7000 |
| 1000+ | $3.0855 | $ 3085.5000 |
