| Hersteller | |
| Hersteller-Teilenummer | STS10DN3LH5 |
| EBEE-Teilenummer | E82970902 |
| Gehäuse | SO-8 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 30V 10A 2.5W 0.021Ω@4.5V,5A 1V@250uA 2 N-Channel SO-8 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.2943 | $ 1.2943 |
| 10+ | $1.0872 | $ 10.8720 |
| 30+ | $0.9735 | $ 29.2050 |
| 100+ | $0.7819 | $ 78.1900 |
| 500+ | $0.7243 | $ 362.1500 |
| 1000+ | $0.6978 | $ 697.8000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,FET, MOSFET Arrays | |
| Datenblatt | ST STS10DN3LH5 | |
| RoHS | ||
| Temperatur | -55℃~+150℃ | |
| Typ | N-Channel | |
| Reverse Transfer Capacitance (Crss-Vds) | 19pF | |
| Number | 2 N-Channel | |
| Pd - Power Dissipation | 2.5W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Current - Continuous Drain(Id) | 10A | |
| Output Capacitance(Coss) | 97pF |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.2943 | $ 1.2943 |
| 10+ | $1.0872 | $ 10.8720 |
| 30+ | $0.9735 | $ 29.2050 |
| 100+ | $0.7819 | $ 78.1900 |
| 500+ | $0.7243 | $ 362.1500 |
| 1000+ | $0.6978 | $ 697.8000 |
