| Hersteller | |
| Hersteller-Teilenummer | STR2N2VH5 |
| EBEE-Teilenummer | E82969837 |
| Gehäuse | SOT-23-3 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 20V 2.3A 0.03Ω@4.5V,2A 350mW 700mV@250uA 1 N-channel SOT-23-3 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.8790 | $ 1.8790 |
| 10+ | $1.7315 | $ 17.3150 |
| 30+ | $1.6398 | $ 49.1940 |
| 100+ | $1.5451 | $ 154.5100 |
| 500+ | $1.5032 | $ 751.6000 |
| 1000+ | $1.4846 | $ 1484.6000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | ST STR2N2VH5 | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 30mΩ@4.5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 16pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 350mW | |
| Drain to Source Voltage | 20V | |
| Gate Threshold Voltage (Vgs(th)) | 700mV | |
| Current - Continuous Drain(Id) | 2.3A | |
| Ciss-Input Capacitance | 367pF | |
| Output Capacitance(Coss) | 92pF | |
| Gate Charge(Qg) | 4.6nC@16V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.8790 | $ 1.8790 |
| 10+ | $1.7315 | $ 17.3150 |
| 30+ | $1.6398 | $ 49.1940 |
| 100+ | $1.5451 | $ 154.5100 |
| 500+ | $1.5032 | $ 751.6000 |
| 1000+ | $1.4846 | $ 1484.6000 |
