| Hersteller | |
| Hersteller-Teilenummer | STP80NF70 |
| EBEE-Teilenummer | E8361041 |
| Gehäuse | TO-220 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 68V 98A 0.0082Ω@10V,40A 190W 2V@250uA 1 N-channel TO-220AB-3 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.8915 | $ 0.8915 |
| 10+ | $0.7293 | $ 7.2930 |
| 30+ | $0.6474 | $ 19.4220 |
| 100+ | $0.5655 | $ 56.5500 |
| 500+ | $0.5173 | $ 258.6500 |
| 1000+ | $0.4932 | $ 493.2000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | ST STP80NF70 | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 9.8mΩ@10V | |
| Betriebstemperatur - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 175pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 190W | |
| Drain to Source Voltage | 68V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 86A | |
| Ciss-Input Capacitance | 2.55nF | |
| Gate Charge(Qg) | 75nC@34V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.8915 | $ 0.8915 |
| 10+ | $0.7293 | $ 7.2930 |
| 30+ | $0.6474 | $ 19.4220 |
| 100+ | $0.5655 | $ 56.5500 |
| 500+ | $0.5173 | $ 258.6500 |
| 1000+ | $0.4932 | $ 493.2000 |
