| Hersteller | |
| Hersteller-Teilenummer | STP45N65M5 |
| EBEE-Teilenummer | E8672233 |
| Gehäuse | TO-220 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 650V 35A 40W 0.078Ω@10V,17.5A 3V@250uA TO-220-3 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $8.2438 | $ 8.2438 |
| 10+ | $7.0471 | $ 70.4710 |
| 50+ | $6.3198 | $ 315.9900 |
| 100+ | $5.7076 | $ 570.7600 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | ST STP45N65M5 | |
| RoHS | ||
| RDS(on) | 78mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 7pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 40W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Current - Continuous Drain(Id) | 35A | |
| Ciss-Input Capacitance | 3.47nF | |
| Gate Charge(Qg) | 82nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $8.2438 | $ 8.2438 |
| 10+ | $7.0471 | $ 70.4710 |
| 50+ | $6.3198 | $ 315.9900 |
| 100+ | $5.7076 | $ 570.7600 |
