| Hersteller | |
| Hersteller-Teilenummer | STP30NF20 |
| EBEE-Teilenummer | E8169094 |
| Gehäuse | TO-220 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 200V 30A 75mΩ@10V,15A 125W 4V@250uA 1 N-channel TO-220 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $3.6185 | $ 3.6185 |
| 10+ | $3.1204 | $ 31.2040 |
| 30+ | $2.8249 | $ 84.7470 |
| 100+ | $2.5263 | $ 252.6300 |
| 500+ | $2.3886 | $ 1194.3000 |
| 1000+ | $2.3268 | $ 2326.8000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | ST STP30NF20 | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 75mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 43pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 125W | |
| Drain to Source Voltage | 200V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 30A | |
| Ciss-Input Capacitance | 1.597nF | |
| Output Capacitance(Coss) | 320pF | |
| Gate Charge(Qg) | 38nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $3.6185 | $ 3.6185 |
| 10+ | $3.1204 | $ 31.2040 |
| 30+ | $2.8249 | $ 84.7470 |
| 100+ | $2.5263 | $ 252.6300 |
| 500+ | $2.3886 | $ 1194.3000 |
| 1000+ | $2.3268 | $ 2326.8000 |
