| Hersteller | |
| Hersteller-Teilenummer | STP25N10F7 |
| EBEE-Teilenummer | E82935187 |
| Gehäuse | TO-220 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 100V 25A 0.035Ω@10V,12.5A 50W 4.5V@250uA 1 N-channel TO-220 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.5325 | $ 1.5325 |
| 10+ | $1.2817 | $ 12.8170 |
| 50+ | $1.1440 | $ 57.2000 |
| 100+ | $0.9876 | $ 98.7600 |
| 500+ | $0.9180 | $ 459.0000 |
| 1000+ | $0.8870 | $ 887.0000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | ST STP25N10F7 | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 35mΩ@10V | |
| Betriebstemperatur - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 19pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 50W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Current - Continuous Drain(Id) | 25A | |
| Ciss-Input Capacitance | 920pF | |
| Output Capacitance(Coss) | 215pF | |
| Gate Charge(Qg) | 14nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.5325 | $ 1.5325 |
| 10+ | $1.2817 | $ 12.8170 |
| 50+ | $1.1440 | $ 57.2000 |
| 100+ | $0.9876 | $ 98.7600 |
| 500+ | $0.9180 | $ 459.0000 |
| 1000+ | $0.8870 | $ 887.0000 |
