| Hersteller | |
| Hersteller-Teilenummer | STP20NF20 |
| EBEE-Teilenummer | E8155618 |
| Gehäuse | TO-220 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 200V 18A 110W 125mΩ@10V,10A 4V@250uA 1 N-channel TO-220 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.5448 | $ 1.5448 |
| 10+ | $1.2674 | $ 12.6740 |
| 50+ | $1.1145 | $ 55.7250 |
| 100+ | $0.9427 | $ 94.2700 |
| 500+ | $0.8654 | $ 432.7000 |
| 1000+ | $0.8323 | $ 832.3000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | ST STP20NF20 | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 125mΩ@10V | |
| Betriebstemperatur - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 30pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 110W | |
| Drain to Source Voltage | 200V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 18A | |
| Ciss-Input Capacitance | 940pF | |
| Output Capacitance(Coss) | 197pF | |
| Gate Charge(Qg) | 39nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.5448 | $ 1.5448 |
| 10+ | $1.2674 | $ 12.6740 |
| 50+ | $1.1145 | $ 55.7250 |
| 100+ | $0.9427 | $ 94.2700 |
| 500+ | $0.8654 | $ 432.7000 |
| 1000+ | $0.8323 | $ 832.3000 |
